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SIR662DP-T1-GE3 N-Channel MOSFETs 60 V 60A (Tc) 6.25W (Ta)/104W (Tc)

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SIR662DP-T1-GE3 N-Channel MOSFETs 60 V 60A (Tc) 6.25W (Ta)/104W (Tc)

Brand Name : original

Model Number : LP2950CDT-5.0/NOPB

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 1000

Delivery Time : 3-5ddays

Packaging Details : carton box

FET Type : N-Channel

Drain to Source Voltage (Vdss) : 60 V

Current - Continuous Drain (Id) @ 25°C : 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 2.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 96 nC @ 10 V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 4365 pF @ 30 V

Power Dissipation (Max) : 6.25W (Ta), 104W (Tc)

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SIR662DP-T1-GE3 N-Channel MOSFETs 60 V 60A (Tc) 6.25W (Ta), 104W (Tc)

MOSFET N-CH 60V 60A PPAK SO-8 Surface Mount PowerPAK® SO-8


Specifications of SIR662DP-T1-GE3

TYPE DESCRIPTION
Category Discrete Semiconductor Products
Single FETs, MOSFETs
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4365 pF @ 30 V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR662


Features of SIR662DP-T1-GE3


• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Low Qg for high efficiency


Applications of SIR662DP-T1-GE3

• Primary side switch
• POL
• Synchronous rectifier
• DC/DC converter
• Amusement system
• Industrial
• LED backlighting


Environmental & Export Classifications of SIR662DP-T1-GE3

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095

SIR662DP-T1-GE3 N-Channel MOSFETs 60 V 60A (Tc) 6.25W (Ta)/104W (Tc)



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SIR662DP-T1-GE3

      

N-Channel MOSFETs 60 V

      
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